BPW16N
Phototransistors T-.75 450 to 1040nm +/-40 deg
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- Manufacturer :
- Vishay Semiconductors
- Product Category :
- Phototransistors
- Collector- Emitter Voltage VCEO Max :
- 32 V
- Collector-Emitter Breakdown Voltage :
- 32 V
- Collector-Emitter Saturation Voltage :
- 0.3 V
- Dark Current :
- 200 nA
- Maximum On-State Collector Current :
- 50 mA
- Maximum Operating Temperature :
- + 100 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- Through Hole
- Package / Case :
- T-3/4
- Pd - Power Dissipation :
- 100 mW
- Peak Wavelength :
- 825 nm
- Product :
- Phototransistors
- Datasheets
- BPW16N
