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MJD31C1G

Bipolar Transistors - BJT 3A 100V 15W NPN
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Manufacturer
onsemi
Mfr.Part
MJD31C1G
Package/Case
-
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Manufacturer :
onsemi
Product Category :
Bipolar Transistors - BJT
Collector- Base Voltage VCBO :
100 V
Collector- Emitter Voltage VCEO Max :
100 V
Collector-Emitter Saturation Voltage :
1.2 V
Configuration :
Single
Emitter- Base Voltage VEBO :
5 V
Gain Bandwidth Product fT :
3 MHz
Maximum DC Collector Current :
3 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 65 C
Mounting Style :
Through Hole
Package / Case :
IPAK-3
Packaging :
Tube
Pd - Power Dissipation :
1.56 W
Series :
MJD31C
Transistor Polarity :
NPN
Datasheets
MJD31C1G