2SA2007E
Bipolar Transistors - BJT Trans GP BJT PNP 60V 12AAdd to BOM
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO :
- - 100 V
- Collector- Emitter Voltage VCEO Max :
- - 60 V
- Collector-Emitter Saturation Voltage :
- - 0.3 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- - 5 V
- Gain Bandwidth Product fT :
- 80 MHz
- Maximum DC Collector Current :
- - 12 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-220FP-3
- Packaging :
- Bulk
- Pd - Power Dissipation :
- 25 W
- Series :
- 2SA2007
- Transistor Polarity :
- PNP
- Datasheets
- 2SA2007E