2N5306 TIN/LEAD
Bipolar Transistors - BJT NPN 25Vcbo 25Vceo 12Vebo 300mA 625mW
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO :
- 25 V
- Collector- Emitter Voltage VCEO Max :
- 25 V
- Collector-Emitter Saturation Voltage :
- 1.4 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 12 V
- Gain Bandwidth Product fT :
- 60 MHz
- Maximum DC Collector Current :
- 600 mA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 65 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-92-3
- Packaging :
- Bulk
- Pd - Power Dissipation :
- 625 mW
- Series :
- 2N5306
- Transistor Polarity :
- NPN
- Datasheets
- 2N5306 TIN/LEAD
