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2N6308 TIN/LEAD

Bipolar Transistors - BJT NPN 350Vceo 700Vcbo 8Vebo 8A 4A 125W
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Manufacturer
Central Semiconductor
Mfr.Part
2N6308 TIN/LEAD
Package/Case
-
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Manufacturer :
Central Semiconductor
Product Category :
Bipolar Transistors - BJT
Collector- Base Voltage VCBO :
700 V
Collector- Emitter Voltage VCEO Max :
350 V
Collector-Emitter Saturation Voltage :
1.5 V
Configuration :
Single
Emitter- Base Voltage VEBO :
8 V
Gain Bandwidth Product fT :
5 MHz
Maximum DC Collector Current :
-
Maximum Operating Temperature :
+ 200 C
Minimum Operating Temperature :
- 65 C
Mounting Style :
Through Hole
Package / Case :
TO-3-2
Packaging :
Tube
Pd - Power Dissipation :
125 W
Series :
2N6308
Transistor Polarity :
NPN
Datasheets
2N6308 TIN/LEAD