FF225R12ME4_B11
IGBT Modules IGBT Module 225A 1200V![FF225R12ME4_B11](/static/common/images/loading_0.gif)
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- Manufacturer :
- Infineon Technologies
- Product Category :
- IGBT Modules
- Collector- Emitter Voltage VCEO Max :
- 1.2 kV
- Collector-Emitter Saturation Voltage :
- 1.85 V
- Configuration :
- Dual
- Continuous Collector Current at 25 C :
- 225 A
- Gate-Emitter Leakage Current :
- 400 nA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 40 C
- Package / Case :
- 152 mm x 62.5 mm x 20.5 mm
- Packaging :
- Tray
- Pd - Power Dissipation :
- 1.05 kW
- Product :
- IGBT Silicon Modules
- Datasheets
- FF225R12ME4_B11