QPD1881L

Manufacturer :

Qorvo

Product Category :

RF JFET Transistors

Gain :

21.2 dB

Id - Continuous Drain Current :

13 A

Maximum Drain Gate Voltage :

55 V

Maximum Operating Temperature :

+ 85 C

Minimum Operating Temperature :

- 40 C

Mounting Style :

SMD/SMT

Operating Frequency :

2.7 GHz to 2.9 GHz

Package / Case :

NI780-2

Pd - Power Dissipation :

237 W

Technology :

GaN-on-SiC

Transistor Polarity :

N-Channel

Transistor Type :

HEMT

Vds - Drain-Source Breakdown Voltage :

145 V

Vgs - Gate-Source Breakdown Voltage :

- 7 V to 2 V