QPD1017

Manufacturer :

Qorvo

Product Category :

RF JFET Transistors

Gain :

15.7 dB

Id - Continuous Drain Current :

20 A

Maximum Drain Gate Voltage :

55 V

Maximum Operating Temperature :

+ 85 C

Minimum Operating Temperature :

- 40 C

Mounting Style :

SMD/SMT

Operating Frequency :

3.1 GHz to 3.5 GHz

Output Power :

460 W

Package / Case :

17.4 mm x 24 mm x 4.31 mm

Pd - Power Dissipation :

511 W

Technology :

GaN-on-SiC

Transistor Polarity :

N-Channel

Transistor Type :

HEMT