SI9407BDY-T1-E3

Mfr.Part #
SI9407BDY-T1-E3
Manufacturer
Vishay Semiconductors
Package/Case
-
Datasheet
Download
Description
MOSFET -60V Vds 20V Vgs SO-8

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
Vishay Semiconductors
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
4.7 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
SO-8
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
5 W
Qg - Gate Charge :
14.5 nC
Rds On - Drain-Source Resistance :
100 mOhms
Technology :
SI
Tradename :
TrenchFET
Transistor Polarity :
P-Channel
Vds - Drain-Source Breakdown Voltage :
60 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
1 V
Fichas Técnicas
SI9407BDY-T1-E3

Manufacturer related products

Catalog related products

Related products

Part Manufacturer Stock Description
SI9407BDY-T1-GE3 Vishay Semiconductors 60,000 MOSFET -60V Vds 20V Vgs SO-8
SI9433BDY-T1-E3 Vishay Semiconductors 11 MOSFET 20V 6.2A 0.04Ohm
SI9433BDY-T1-GE3 Vishay Semiconductors 0 MOSFET 20V 6.2A 2.5W 40mohm @ 4.5V
SI9435BDY-T1-E3 Vishay Semiconductors 19,114 MOSFET 30V 5.7A 0.042Ohm
SI9435BDY-T1-GE3 Vishay Semiconductors 2,981 MOSFET 30V 5.7A 2.5W 42mohm @ 10V
SI9435DY Vishay 57 SOP-8P