- Package / Case：
-
- Maximum Operating Temperature：
-
- Mounting Style：
-
- Tradename：
-
- Pd - Power Dissipation：
-
- Vgs - Gate-Source Voltage：
-
- Transistor Polarity：
-
- Vds - Drain-Source Breakdown Voltage：
-
- Rds On - Drain-Source Resistance：
-
- Vgs th - Gate-Source Threshold Voltage：
-
25 Records
| Image | Part/Manufacturer | Description | Price | Stock | Action |
|---|---|---|---|---|---|
|
Infineon Technologies | MOSFET HIGH POWE...
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274
In-stock
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Infineon Technologies | MOSFET HIGH POWE...
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580
In-stock
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Vishay / Siliconix | MOSFET N-CHANNEL...
|
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158
In-stock
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Infineon Technologies | MOSFET HIGH POWE...
|
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240
In-stock
|
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Infineon Technologies | MOSFET HIGH POWE...
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116
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Infineon Technologies | MOSFET MOSFT 55V 6...
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8,917
In-stock
|
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|
STMicroelectronics | MOSFET N-Ch 200V 0.01...
|
|
48
In-stock
|
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|
Infineon Technologies | MOSFET N-Ch 250V 61A...
|
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126
In-stock
|
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|
|
Infineon Technologies | MOSFET N-Ch 250V 61A...
|
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1,500
In-stock
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|
Nexperia | MOSFET N-chnl30V7.1m l...
|
|
12
In-stock
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|
|
Infineon Technologies | MOSFET 100V 63A 13.9mO...
|
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3
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|
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|
|
Nexperia | MOSFET 25V N-CHANN...
|
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204
In-stock
|
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onsemi / Fairchild | MOSFET 100V 61a 0.016 O...
|
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1,800
In-stock
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onsemi | MOSFET PTNG 150V 15...
|
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2,385
In-stock
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onsemi | MOSFET SO8FL 60V
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138
In-stock
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Taiwan Semiconductor | MOSFET 30V 61A Single...
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79
In-stock
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|
onsemi | MOSFET PFET DPAK...
|
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42,000
In-stock
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|
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onsemi / Fairchild | MOSFET 200V N-Channel...
|
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2,817
In-stock
|
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|
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Nexperia | MOSFET N-channel 60 V ...
|
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9,000
In-stock
|
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|
onsemi | MOSFET MV7 80V SG 1...
|
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3,000
In-stock
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