- Packaging：
-
- Number of Channels：
-
- Package / Case：
-
- Minimum Operating Temperature：
-
- Maximum Operating Temperature：
-
- Mounting Style：
-
- Pd - Power Dissipation：
-
- Vgs - Gate-Source Voltage：
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- Transistor Polarity：
-
- Vds - Drain-Source Breakdown Voltage：
-
- Id - Continuous Drain Current：
-
- Vgs th - Gate-Source Threshold Voltage：
-
- Qg - Gate Charge：
-
- Channel Mode：
-
23 Records
| Image | Part/Manufacturer | Description | Price | Stock | Action |
|---|---|---|---|---|---|
|
Diodes Incorporated | MOSFET P-Chnl 60V
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9,632
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IXYS Integrated Circuits | MOSFET N Ch Dep Mode...
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Diodes Incorporated | MOSFET P-Chnl 60V
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Diodes Incorporated | MOSFET P-Chnl 250V
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2,947
In-stock
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Toshiba | MOSFET P-Ch Sm Sig F...
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3,217
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Advanced Linear Devices | MOSFET Dual N-Ch Mat...
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21
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Advanced Linear Devices | MOSFET Dual N-Ch Mat...
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12
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Advanced Linear Devices | MOSFET Dual N-Ch EP...
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37
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Advanced Linear Devices | MOSFET Dual N-Ch EP...
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28
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Advanced Linear Devices | MOSFET Dual N-Ch Mat...
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38
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Advanced Linear Devices | MOSFET Dual N-Ch Mat...
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42
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Diodes Incorporated | MOSFET P-Chnl 250V
|
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9,000
In-stock
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Diodes Incorporated | MOSFET P-Chnl 45V
|
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36,226
In-stock
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IXYS Integrated Circuits | MOSFET N Ch Dep Mode...
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7,000
In-stock
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PANJIT | MOSFET PJ/D1NA60/T...
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||
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IXYS | MOSFET POLAR MOS...
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PANJIT | MOSFET /1NA60/TR/13"...
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PANJIT | MOSFET PJ/U1NA60/T...
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Advanced Linear Devices | MOSFET Dual N-Ch Mat...
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Advanced Linear Devices | MOSFET Dual N-Ch Mat...
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|
