MRFX600GSR5
RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- RF MOSFET Transistors
- Gain :
- 26.4 dB
- Id - Continuous Drain Current :
- 32 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 1.8 MHz to 400 MHz
- Output Power :
- 600 W
- Package / Case :
- NI-780GS-4L
- Packaging :
- Cut Tape, Reel
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 193 V
- Datasheets
- MRFX600GSR5
