MRF24G300HSR5
RF MOSFET Transistors RF Power GaN Transistor, 300 W CW over 2400-2500 MHz, 50 V
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- RF MOSFET Transistors
- Gain :
- 14.9 dB
- Id - Continuous Drain Current :
- 24.3 mA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 2400 MHz to 2500 MHz
- Output Power :
- 307 W
- Package / Case :
- NI-780H-4
- Packaging :
- Cut Tape, Reel
- Technology :
- GaN-on-SiC
- Transistor Polarity :
- Dual N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 125 V
- Datasheets
- MRF24G300HSR5
