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2SA1587-GR,LF

Bipolar Transistors - BJT Transistor for Low Freq. Amplification
Toshiba img
Manufacturer
Toshiba
Mfr.Part
2SA1587-GR,LF
Package/Case
-
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Manufacturer :
Toshiba
Product Category :
Bipolar Transistors - BJT
Collector- Base Voltage VCBO :
- 120 V
Collector- Emitter Voltage VCEO Max :
- 120 V
Collector-Emitter Saturation Voltage :
- 300 mV
Configuration :
Single
Emitter- Base Voltage VEBO :
- 5 V
Gain Bandwidth Product fT :
100 MHz
Maximum DC Collector Current :
- 100 mA
Maximum Operating Temperature :
+ 125 C
Mounting Style :
SMD/SMT
Package / Case :
SC-70-3
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
100 mW
Qualification :
AEC-Q101
Series :
2SA1587
Transistor Polarity :
PNP
Datasheets
2SA1587-GR,LF