BCW66HQTA
Bipolar Transistors - BJT General Purpose Transistor
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO :
- 75 V
- Collector- Emitter Voltage VCEO Max :
- 45 V
- Collector-Emitter Saturation Voltage :
- 0.7 mV
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 7 V
- Gain Bandwidth Product fT :
- 100 MHz
- Maximum DC Collector Current :
- 800 mA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-23-3
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 350 mW
- Qualification :
- AEC-Q101
- Transistor Polarity :
- NPN
- Datasheets
- BCW66HQTA
