2SC4102U3HZGT106S
Bipolar Transistors - BJT H. Volt 120V, 50mA UMT3
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO :
- 120 V
- Collector- Emitter Voltage VCEO Max :
- 120 V
- Collector-Emitter Saturation Voltage :
- 500 mV
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 5 V
- Gain Bandwidth Product fT :
- 140 MHz
- Maximum DC Collector Current :
- -
- Maximum Operating Temperature :
- + 150 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-323-3
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 200 mW
- Qualification :
- AEC-Q101
- Transistor Polarity :
- NPN
- Datasheets
- 2SC4102U3HZGT106S
