2SB1201S-E

Manufacturer :

onsemi

Product Category :

Bipolar Transistors - BJT

Collector- Base Voltage VCBO :

60 V

Collector- Emitter Voltage VCEO Max :

50 V

Collector-Emitter Saturation Voltage :

150 mV, - 300 mV

Configuration :

Single

Emitter- Base Voltage VEBO :

6 V

Gain Bandwidth Product fT :

150 MHz

Maximum DC Collector Current :

4 A, - 4 A

Maximum Operating Temperature :

+ 150 C

Mounting Style :

Through Hole

Package / Case :

TO-251-3

Packaging :

Bulk

Pd - Power Dissipation :

800 MW

Series :

2SB1201

Transistor Polarity :

NPN, PNP