2DB1132R-13

Manufacturer :

Diodes Incorporated

Product Category :

Bipolar Transistors - BJT

Collector- Base Voltage VCBO :

- 40 V

Collector- Emitter Voltage VCEO Max :

- 32 V

Collector-Emitter Saturation Voltage :

- 125 mV

Configuration :

Single

Emitter- Base Voltage VEBO :

- 5 V

Gain Bandwidth Product fT :

190 MHz

Maximum DC Collector Current :

- 1 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Package / Case :

SOT-89-3

Packaging :

Cut Tape, MouseReel, Reel

Pd - Power Dissipation :

1000 mW

Series :

2DB11

Transistor Polarity :

PNP