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BC847AE6327HTSA1

Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
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Manufacturer
Infineon Technologies
Mfr.Part
BC847AE6327HTSA1
Package/Case
-
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Manufacturer :
Infineon Technologies
Product Category :
Bipolar Transistors - BJT
Collector- Base Voltage VCBO :
50 V
Collector- Emitter Voltage VCEO Max :
45 V
Collector-Emitter Saturation Voltage :
200 mV
Configuration :
Dual
Emitter- Base Voltage VEBO :
6 V
Gain Bandwidth Product fT :
250 MHz
Maximum DC Collector Current :
200 mA
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 65 C
Mounting Style :
SMD/SMT
Package / Case :
SOT-23-3
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
330 mW
Series :
BC847
Transistor Polarity :
NPN
Datasheets
BC847AE6327HTSA1