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2N5817 TIN/LEAD

Bipolar Transistors - BJT 50Vcbo 50Vces 40Vceo 5.0A 625mW
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Manufacturer
Central Semiconductor
Mfr.Part
2N5817 TIN/LEAD
Package/Case
-
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Manufacturer :
Central Semiconductor
Product Category :
Bipolar Transistors - BJT
Collector- Base Voltage VCBO :
50 V
Collector- Emitter Voltage VCEO Max :
40 V
Collector-Emitter Saturation Voltage :
0.75 V
Configuration :
Single
Emitter- Base Voltage VEBO :
5 V
Gain Bandwidth Product fT :
120 MHz
Maximum DC Collector Current :
1000 mA
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 65 C
Mounting Style :
Through Hole
Package / Case :
TO-92-3
Packaging :
Bulk
Pd - Power Dissipation :
625 mW
Series :
2N5817
Transistor Polarity :
PNP
Datasheets
2N5817 TIN/LEAD