2N2102 TIN/LEAD
Bipolar Transistors - BJT 120Vcbo 80Vcer 65Vceo 7.0Vebo 1.0W
Add to BOM
- * Contact Name:
- * Company:
- * E-Mail:
- * Phone:
- * Comment:
- * Captcha:
-
- Manufacturer :
- Central Semiconductor
- Product Category :
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO :
- 120 V
- Collector- Emitter Voltage VCEO Max :
- 65 V
- Collector-Emitter Saturation Voltage :
- 0.5 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 7 V
- Gain Bandwidth Product fT :
- 60 MHz
- Maximum DC Collector Current :
- -
- Maximum Operating Temperature :
- + 200 C
- Minimum Operating Temperature :
- - 65 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-39-3
- Packaging :
- Bulk
- Pd - Power Dissipation :
- 1 W
- Series :
- 2N2102
- Transistor Polarity :
- NPN
- Datasheets
- 2N2102 TIN/LEAD
