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F3L150R07W2E3_B11

IGBT Modules IGBT MODULES 650V 150A
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Manufacturer
Infineon Technologies
Mfr.Part
F3L150R07W2E3_B11
Package/Case
-
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Manufacturer :
Infineon Technologies
Product Category :
IGBT Modules
Collector- Emitter Voltage VCEO Max :
650 V
Collector-Emitter Saturation Voltage :
1.45 V
Configuration :
IGBT-Inverter
Continuous Collector Current at 25 C :
150 A
Gate-Emitter Leakage Current :
400 nA
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 40 C
Package / Case :
Module
Packaging :
Tray
Pd - Power Dissipation :
335 W
Product :
IGBT Silicon Modules
Datasheets
F3L150R07W2E3_B11