APT100GN120JDQ4

Manufacturer :

Microsemi / Microchip

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

1.2 kV

Collector-Emitter Saturation Voltage :

1.7 V

Configuration :

Single

Continuous Collector Current at 25 C :

153 A

Gate-Emitter Leakage Current :

600 nA

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Package / Case :

ISOTOP-4

Packaging :

Tube

Pd - Power Dissipation :

446 W

Product :

IGBT Silicon Carbide Modules