BSM50GB120DN2
IGBT Modules 1200V 50A DUAL
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- Manufacturer :
- Infineon Technologies
- Product Category :
- IGBT Modules
- Collector- Emitter Voltage VCEO Max :
- 1200 V
- Collector-Emitter Saturation Voltage :
- 2.5 V
- Configuration :
- Half Bridge
- Continuous Collector Current at 25 C :
- 78 A
- Gate-Emitter Leakage Current :
- 200 nA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 40 C
- Package / Case :
- Half Bridge1
- Packaging :
- Tray
- Pd - Power Dissipation :
- 400 W
- Product :
- IGBT Silicon Modules
- Datasheets
- BSM50GB120DN2
