APTGFQ25H120T2G
IGBT Modules Power Module - IGBT
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- Manufacturer :
- Microchip Technology
- Product Category :
- IGBT Modules
- Collector- Emitter Voltage VCEO Max :
- 1.2 kV
- Collector-Emitter Saturation Voltage :
- 2.1 V
- Configuration :
- Quad
- Continuous Collector Current at 25 C :
- 40 A
- Gate-Emitter Leakage Current :
- 150 nA
- Maximum Operating Temperature :
- + 100 C
- Minimum Operating Temperature :
- - 40 C
- Package / Case :
- SP2
- Pd - Power Dissipation :
- 227 W
- Product :
- IGBT Silicon Modules
- Datasheets
- APTGFQ25H120T2G
