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RGS80TSX2GC11

IGBT Transistors 10us Short-Circuit Tolerance, 1200V 40A, Field Stop Trench IGBT
ROHM Semiconductor img
Manufacturer
ROHM Semiconductor
Mfr.Part
RGS80TSX2GC11
Package/Case
-
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Manufacturer :
ROHM Semiconductor
Product Category :
IGBT Transistors
Collector- Emitter Voltage VCEO Max :
1200 V
Collector-Emitter Saturation Voltage :
1.7 V
Configuration :
Single
Continuous Collector Current at 25 C :
80 A
Maximum Gate Emitter Voltage :
30 V
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
Through Hole
Package / Case :
TO-247N-3
Packaging :
Tube
Pd - Power Dissipation :
555 W
Datasheets
RGS80TSX2GC11