Sign In Register

Account & Tools

IRF9Z34NSTRRPBF

MOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nC
Infineon Technologies img
Manufacturer
Infineon Technologies
Mfr.Part
IRF9Z34NSTRRPBF
Package/Case
-
Download

Add to BOM

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
Infineon Technologies
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
19 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
TO-252-3
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
68 W
Qg - Gate Charge :
23.3 nC
Rds On - Drain-Source Resistance :
100 mOhms
Technology :
SI
Transistor Polarity :
P-Channel
Vds - Drain-Source Breakdown Voltage :
55 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
4 V
Datasheets
IRF9Z34NSTRRPBF