IRF9Z34NSTRRPBF
MOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nCAdd to BOM
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- Manufacturer :
- Infineon Technologies
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 19 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-252-3
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 68 W
- Qg - Gate Charge :
- 23.3 nC
- Rds On - Drain-Source Resistance :
- 100 mOhms
- Technology :
- SI
- Transistor Polarity :
- P-Channel
- Vds - Drain-Source Breakdown Voltage :
- 55 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 4 V
- Datasheets
- IRF9Z34NSTRRPBF