APTGT100A60T1G
IGBT Modules DOR CC8013Add to BOM
- * Contact Name:
- * Company:
- * E-Mail:
- * Phone:
- * Comment:
- * Captcha:
-
- Manufacturer :
- Microsemi / Microchip
- Product Category :
- IGBT Modules
- Collector- Emitter Voltage VCEO Max :
- 600 V
- Collector-Emitter Saturation Voltage :
- 1.5 V
- Configuration :
- Dual
- Continuous Collector Current at 25 C :
- 150 A
- Gate-Emitter Leakage Current :
- 400 nA
- Maximum Operating Temperature :
- + 100 C
- Minimum Operating Temperature :
- - 40 C
- Package / Case :
- SP1-12
- Packaging :
- Tube
- Pd - Power Dissipation :
- 340 W
- Product :
- IGBT Silicon Modules
- Datasheets
- APTGT100A60T1G