FGD3N60UNDF

Manufacturer :

onsemi / Fairchild

Product Category :

IGBT Transistors

Collector- Emitter Voltage VCEO Max :

600 V

Collector-Emitter Saturation Voltage :

2.4 V

Configuration :

Single

Continuous Collector Current at 25 C :

6 A

Maximum Gate Emitter Voltage :

20 V

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Package / Case :

TO-252-3

Packaging :

Cut Tape, MouseReel, Reel

Pd - Power Dissipation :

60 W

Series :

FGD3N60UNDF

Technology :

SI