FGD3325G2-F085V

Manufacturer :

onsemi

Product Category :

IGBT Transistors

Collector- Emitter Voltage VCEO Max :

250 V

Collector-Emitter Saturation Voltage :

1.15 V

Configuration :

Single

Continuous Collector Current at 25 C :

41 A

Maximum Gate Emitter Voltage :

10 V

Maximum Operating Temperature :

+ 175 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Package / Case :

TO-252-3

Packaging :

Reel

Pd - Power Dissipation :

150 W

Qualification :

AEC-Q101

Technology :

SI