FGL60N100BNTDTU
IGBT Transistors HIGH POWER
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- Manufacturer :
- onsemi / Fairchild
- Product Category :
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max :
- 1000 V
- Collector-Emitter Saturation Voltage :
- 1.5 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 60 A
- Maximum Gate Emitter Voltage :
- 25 V
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-264-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 180 W
- Series :
- FGL60N100BNTD
- Technology :
- SI
- Datasheets
- FGL60N100BNTDTU
